2sk4075 - 40v,60a 1y4t1o

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

2SK4075 SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION The 2SK4075 is N-channel MOS FET designed for high current switching applications.

ORDERING INFORMATION PART NUMBER

LEAD PLATING

2SK4075-ZK-E1-AY

Pure Sn (Tin)

2SK4075-ZK-E2-AY

PACKING

PACKAGE

Tape

TO-252 (MP-3ZK)

2500 p/reel

typ. 0.27 g

FEATURES

(TO-252)

• Low on-state resistance RDS(on)1 = 6.7 mΩ MAX. (VGS = 10 V, ID = 30 A) RDS(on)2 = 10 mΩ MAX. (VGS = 4.5 V, ID = 15 A) • Low Ciss: Ciss = 2900 pF TYP. • Logic level drive type

ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V)

VDSS

40

V

Gate to Source Voltage (VDS = 0 V)

VGSS

±20

V

Drain Current (DC) (TC = 25°C)

ID(DC)

±60

A

ID(pulse)

±180

A

Total Power Dissipation (TC = 25°C)

PT1

52

W

Total Power Dissipation (TA = 25°C)

PT2

1.0

W

Channel Temperature

Tch

150

°C

Drain Current (pulse)

Note1

Storage Temperature

Tstg

–55 to +150

°C

Single Avalanche Current

Note2

IAS

28

A

Single Avalanche Energy

Note2

EAS

78

mJ

Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, VDD = 20 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 μH

THERMAL RESISTANCE Channel to Case Thermal Resistance

Rth(ch-C)

2.4

°C/W

Channel to Ambient Thermal Resistance

Rth(ch-A)

125

°C/W

The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D18223EJ2V0DS00 (2nd edition) Date Published September 2006 NS (K) Printed in Japan

The mark shows major revised points. The revised points can be easily searched by copying an " " in the PDF file and specifying it in the "Find what:" field.

2006

2SK4075 ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS

SYMBOL

MIN.

TYP.

MAX.

UNIT

Zero Gate Voltage Drain Current

IDSS

VDS = 40 V, VGS = 0 V

1

μA

Gate Leakage Current

IGSS

VGS = ±20 V, VDS = 0 V

±100

nA

VGS(off)

VDS = 10 V, ID = 1 mA

1.5

2.5

V

| yfs |

VDS = 10 V, ID = 15 A

9.3

RDS(on)1

VGS = 10 V, ID = 30 A

5.2

6.7

mΩ

RDS(on)2

VGS = 4.5 V, ID = 15 A

7.2

10

mΩ

Gate Cut-off Voltage

TEST CONDITIONS

Forward Transfer ittance

Note

Drain to Source On-state Resistance

Note

2.0

S

Input Capacitance

Ciss

VDS = 10 V

2900

pF

Output Capacitance

Coss

VGS = 0 V

450

pF

Reverse Transfer Capacitance

Crss

f = 1 MHz

293

pF

Turn-on Delay Time

td(on)

VDD = 20 V

18

ns

ID = 30 A

16

ns

VGS = 10 V

54

ns

RG = 0 Ω

9

ns

Rise Time

tr

Turn-off Delay Time

td(off)

Fall Time

tf

Total Gate Charge

QG

VDD = 32 V

54

nC

Gate to Source Charge

QGS

VGS = 10 V

11

nC

QGD

ID = 60 A

15

nC

VF(S-D)

IF = 60 A, VGS = 0 V

0.9

Reverse Recovery Time

trr

IF = 60 A, VGS = 0 V

33

ns

Reverse Recovery Charge

Qrr

di/dt = 100 A/μs

33

nC

Gate to Drain Charge Body Diode Forward Voltage

Note

1.5

V

Note Pulsed TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 Ω

D.U.T. L

50 Ω

PG. VGS = 20 → 0 V

TEST CIRCUIT 2 SWITCHING TIME

RL RG

PG.

VDD

VGS VGS Wave Form

0

VGS

10%

90%

VDD VDS 90%

IAS

VDS

ID

VDS τ

τ = 1 μs Duty Cycle ≤ 1%

TEST CIRCUIT 3 GATE CHARGE D.U.T. IG = 2 mA PG.

2

50 Ω

0

10%

10%

tr

td(off)

Wave Form

VDD

Starting Tch

90%

VDS

VGS 0

BVDSS

RL VDD

Data Sheet D18223EJ2V0DS

td(on) ton

tf toff

2SK4075 TYPICAL CHARACTERISTICS (TA = 25°C) TOTAL POWER DISSIPATION vs. CASE TEMPERATURE

60 100

PT - Total Power Dissipation - W

dT - Percentage of Rated Power - %

DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA

80 60 40 20

50 40 30 20 10

0

0 0

25

50

75

100 125

150 175

0

25

50

75

100

125

150

175

TC - Case Temperature - °C

TC - Case Temperature - °C

FORWARD BIAS SAFE OPERATING AREA 1000 RDS(on) Limited (VGS = 10 V)

ID(pulse)

PW = 100 μs

ID(DC) DC

10

Power Dissipation Limited

1

TC = 25°C Single Pulse

10 ms 1 ms

0.1 0.1

1

10

100

VDS - Drain to Source Voltage - V

TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000

rth(t) - Transient Thermal Resistance - °C/W

ID - Drain Current - A

100

Rth(ch-A) = 125°C/W 100

10

Rth(ch-C) = 2.4°C/W

1

0.1 Single Pulse 0.01 100 μ

1m

10 m

100 m

1

10

100

1000

PW - Pulse Width - s

Data Sheet D18223EJ2V0DS

3

2SK4075

DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE

FORWARD TRANSFER CHARACTERISTICS 100

VGS = 10 V

200 150

4.5 V 100

TA = −55°C

10

ID - Drain Current - A

ID - Drain Current - A

250

25°C 75°C

1

150°C

0.1

50

0.01

VDS = 10 V Pulsed

Pulsed 0

0.001

0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5

FORWARD TRANSFER ITTANCE vs. DRAIN CURRENT | yfs | - Forward Transfer ittance - S

VGS(off) - Gate Cut-off Voltage - V

1

VDS = 10 V ID = 1 mA -50

0

50

100

150

TA = 150°C 75°C 25°C

VDS = 10 V Pulsed 1 0.1

20 15 VGS = 4.5 V

5 10 V 0 100

ID - Drain Current - A

10

100

1000

DRAIN TO SOURCE ON-STATERESISTANCE vs. GATE TO SOURCE VOLTAGE RDS(on) - Drain to Source On-state Resistance - mΩ

RDS(on) - Drain to Source On-state Resistance - mΩ

4

25

10

1

ID - Drain Current - A

Pulsed

1

−55°C

10

200

DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT

0.1

5

100

Tch - Channel Temperature - °C

10

4

GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE

1.5

30

3

VGS - Gate to Source Voltage - V

2

0 -100

2

VDS - Drain to Source Voltage - V

2.5

0.5

1

Data Sheet D18223EJ2V0DS

30 Pulsed 25 20 ID = 12 A

15

30 A 60 A

10 5 0 0

5

10

15

VGS - Gate to Source Voltage - V

20

2SK4075

CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10000

14

Ciss, Coss, Crss - Capacitance - pF

ID = 15 A, VGS = 4.5 V

12 10 8 6 4

ID = 30 A, VGS = 10 V

2 0 -100

C iss 1000 C oss C rss 100 VGS = 0 V f = 1 MHz 10

-50

0

50

100

150

0.1

200

SWITCHING CHARACTERISTICS

100

DYNAMIC INPUT/OUTPUT CHARACTERISTICS

1000

12

40

100

VDS - Drain to Source Voltage - V

td(on), tr, td(off), tf - Switching Time - ns

10

VDS - Drain to Source Voltage - V

Tch - Channel Temperature - °C

td(off) td(on) tr

10 tf

VDD = 20 V VGS = 10 V RG = 0 Ω

VDD = 32 V 20 V 8V

35 30

10 8

25

6

20 VGS

15

4

10 VDS

5

2

ID = 60 A Pulsed

0

1 0.1

1

10

0 0

100

20

40

60

QG - Gate Chage - nC

ID - Drain Current - A

SOURCE TO DRAIN DIODE FORWARD VOLTAGE

REVERSE RECOVERY TIME vs. DRAIN CURRENT

100 trr - Reverse Recovery Time - ns

1000

IF - Diode Forward Current - A

1

VGS = 10 V 100 0V 10

1 Pulsed

10

di/dt = 100 A/μs V GS = 0 V 1

0.1 0

0.5

1

1.5

0.1

1

10

100

ID - Drain Current - A

VF(S-D) - Source to Drain Voltage - V

Data Sheet D18223EJ2V0DS

5

VGS - Gate to Source Voltage - V

RDS(on) - Drain to Source On-state Resistance - mΩ

DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE

2SK4075 PACKAGE DRAWING (Unit: mm)

TO-252 (MP-3ZK) 2.3±0.1

1.0 TYP.

6.5±0.2 5.1 TYP. 4.3 MIN.

0.5±0.1 No Plating

3

1.14 MAX.

0.51 MIN.

2

0.8

1

6.1±0.2 10.4 MAX. (9.8 TYP.)

4.0 MIN.

4

No Plating 0 to 0.25 0.5±0.1

0.76±0.12 2.3

2.3 1. Gate 2. Drain 3. Source 4. Fin (Drain)

1.0

EQUIVALENT CIRCUIT Drain

Body Diode

Gate

Source

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.

6

Data Sheet D18223EJ2V0DS

2SK4075 TAPE INFORMATION There are two types (-E1, -E2) of taping depending on the direction of the device.

Draw-out side

Reel side

MARKING INFORMATION

K4075

Abbreviation of part number Pb-free plating marking Lot code

RECOMMENDED SOLDERING CONDITIONS The 2SK4075 should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, please an NEC Electronics sales representative. For technical information, see the following website. Semiconductor Device Mount Manual (http://www.necel.com/pkg/en/mount/index.html)

Soldering Method Infrared reflow

Soldering Conditions Maximum temperature (Package's surface temperature): 260°C or below

Recommended Condition Symbol IR60-00-3

Time at maximum temperature: 10 seconds or less Time of temperature higher than 220°C: 60 seconds or less Preheating time at 160 to 180°C: 60 to 120 seconds Maximum number of reflow processes: 3 times Maximum chlorine content of rosin flux (percentage mass): 0.2% or less Partial heating

Maximum temperature (Pin temperature): 350°C or below

P350

Time (per side of the device): 3 seconds or less Maximum chlorine content of rosin flux: 0.2% (wt.) or less

Caution Do not use different soldering methods together (except for partial heating).

Data Sheet D18223EJ2V0DS

7

2SK4075

• The information in this document is current as of September, 2006. The information is subject to change without notice. For actual de, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document. • NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others. • Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. • While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC Electronics products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment and anti-failure features. • NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life ). "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life systems and medical equipment for life , etc. The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications not intended by NEC Electronics, they must an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). M8E 02. 11-1