M54523p Data Sheet Tape Deck k6g2a
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MITSUBISHI SEMICONDUCTOR
M54523P/FP 7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE
DESCRIPTION M54523P and M54523FP are seven-circuit Darlington transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply.
PIN CONFIGURATION
INPUT
FEATURES ● High breakdown voltage (BV CEO ≥ 50V) ● High-current driving (IC(max) = 500mA) ● With clamping diodes ● Driving available with PMOS IC ouput ● Wide operating temperature range (Ta = –20 to +75°C) APPLICATION Drives of relays and printers, digit drives of indication elements (LEDs and lamps), and interfaces between standard MOS-bipolar logic IC
16 →O1
IN1→ 1 IN2→ 2
15 →O2
IN3→ 3
14 →O3
IN4→ 4
13 →O4
IN5→ 5
12 →O5
IN6→ 6
11 →O6
IN7→ 7
10 →O7
GND
9
8
OUTPUT
→COM COMMON
16P4(P) Package type 16P2N-A(FP)
CIRCUIT DIAGRAM COM
FUNCTION The M54523P and M54523FP each have seven circuits consisting of NPN Darlington transistors. These ICs have resistance of 2.7kΩ between input transistor bases and input pins. A spike-killer clamping diode is provided between each output pin (collector) and COM pin. The output transistor emitters are all connected to the GND pin (pin 8). The collector current is 500mA maximum. Collector-emitter supply voltage is 50V maximum.The M54523FP is enclosed in a molded small flat package, enabling space-saving design.
ABSOLUTE MAXIMUM RATINGS Symbol VCEO IC VI IF VR Pd Topr Tstg
OUTPUT INPUT
2.7k
5k 3k
The seven circuits share the COM and GND The diode, indicated with the dotted line, is parasitic, and cannot be used.
Parameter
Conditions Output, H Current per circuit output, L
Input voltage Clamping diode forward current Clamping diode reverse voltage Power dissipation Storage temperature
Unit : Ω
(Unless otherwise noted, Ta = –20 ~ +75 °C)
Collector-emitter voltage Collector current
Operating temperature
GND
Ratings –0.5 ~ +50 500 –0.5 ~ +30 500 50
Ta = 25°C, when mounted on board
1.47(P)/1.00(FP) –20 ~ +75 –55 ~ +125
Unit V mA V mA V W °C °C
Jan.2000
MITSUBISHI SEMICONDUCTOR
M54523P/FP 7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE
RECOMMENDED OPERATING CONDITIONS Symbol
(Unless otherwise noted, Ta = –20 ~ +75°C)
Limits
Parameter
VO
Output voltage Collector current (Current per 1 circuit when 7 circuits are coming on simultaneously)
IC
VIH
“H” input voltage
VIL
“L” input voltage
Duty Cycle P : no more than 8% FP : no more than 8% Duty Cycle P : no more than 30% FP : no more than 25% IC ≤ 400mA
Parameter
V (BR) CEO
Collector-emitter breakdown voltage
II VF IR h FE
max 50
0
—
400
Unit V
0
—
200
3.85 3.4 0
— — —
25 25 0.6
V V
(Unless otherwise noted, Ta = –20 ~ +75°C)
Symbol
VCE(sat)
typ —
mA
IC ≤ 200mA
ELECTRICAL CHARACTERISTICS
min 0
Limits
Test conditions ICEO = 100µA
VI = 3.85V, I C = 400mA Collector-emitter saturation voltage VI = 3.4V, IC = 200mA VI = 3.85V Input current VI = 25V Clamping diode forward volltage IF = 400mA Clamping diode reverse current VR = 50V DC amplification factor VCE = 4V, IC = 350mA, Ta = 25°C
min 50 — —
typ* — 1.2 1.0
max — 2.4 1.6
— — — — 1000
1.2 9.5 1.4 — 2500
1.8 18 2.4 100 —
Unit V V mA V µA —
* : The typical values are those measured under ambient temperature (Ta) of 25°C. There is no guarantee that these values are obtained under any conditions.
SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25 °C) Symbol ton toff
Parameter Turn-on time Turn-off time
Limits
Test conditions CL = 15pF (note 1)
min —
typ 10
max —
—
120
—
Unit ns ns
TIMING DIAGRAM
NOTE 1 TEST CIRCUIT
INPUT
Vo
INPUT
50%
50%
Measured device
RL OPEN OUTPUT
PG
OUTPUT
50Ω
50%
50%
CL ton
toff
(1)Pulse generator (PG) characteristics : PRR=1kHz, tw = 10µs, tr = 6ns, tf = 6ns, Zo = 50Ω VP = 3.85VP-P (2)Input-output conditions : RL = 25Ω, Vo = 10V (3)Electrostatic capacity CL includes floating capacitance at connections and input capacitance at probes
Jan.2000
MITSUBISHI SEMICONDUCTOR
M54523P/FP 7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE TYPICAL CHARACTERISTICS Output Saturation Voltage Collector Current Characteristics
Thermal Derating Factor Characteristics 500
M54523FP
1.0
0.5
0
Collector current Ic (mA)
500
25
50
75
3
200 •The collector current values represent the current per circuit. •Repeated frequencyy ≥ 10Hz •The value the circle represents the value of the simultaneously-operated circuit. •Ta = 25°C
20
40
60
80
4 5 6 7
500
1.0
1.5
2.0
1
300 2
200 •The collector current values represent the current per circuit. •Repeated frequency ≥ 10Hz •The value the circle represents the value of the simultaneously-operated circuit. •Ta = 75°C
100
0
20
40
60
80
Duty cycle (%)
Duty Cycle-Collector Characteristics (M54523FP)
Duty Cycle-Collector Characteristics (M54523FP)
500 1
2
200 •The collector current values represent the current per circuit. •Repeated frequency ≥ 10Hz •The value the circle represents the value of the simultaneously-operated circuit. •Ta = 25°C
0
0.5
400
0
100
300
0
0
Duty cycle (%)
400
100
Ta = 75°C Ta = 25°C Ta = –20°C
100
Duty Cycle-Collector Characteristics (M54523P)
2
500
VI = 3.85V
Duty Cycle-Collector Characteristics (M54523P)
300
0
200
Output saturation voltage VCE(sat) (V)
400
0
300
Ambient temperature Ta (°C)
1
100
400
0
100
Collector current Ic (mA)
0
Collector current Ic (mA)
Collector current Ic (mA)
M54523P
1.5
20
40
60
Duty cycle (%)
80
3 4 5 6 7
100
Collector current Ic (mA)
Power dissipation Pd (W)
2.0
3 4 5 6 7
100
400
300
1
200
2 3
4 •The collector current values represent the current per circuit. 5 •Repeated frequency ≥ 10Hz 76 •The value the circle represents the value of the simultaneously-operated circuit. •Ta = 75°C
100
0
0
20
40
60
80
100
Duty cycle (%)
Jan.2000
MITSUBISHI SEMICONDUCTOR
M54523P/FP 7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE
DC Amplification Factor Collector Current Characteristics
Input Characteristics 104
DC amplification factor hFE
Input Current II (mA)
16
12 Ta = 75°C Ta = 25°C Ta = –20°C
8
4
0
0
8
16
24
VCE = 4V Ta = 75°C Ta = 25°C Ta = –20°C
3
103 7 5 3
102 1 10
32
3
5 7 102
3
5 7 103
Input voltage VI (V)
Collector current IcC (mA)
Grounded Emitter Transfer Characteristics
Clamping Diode Characteristics
500
500
Forward bias current IF (mA)
Collector current Ic (mA)
7 5
400 VCE = 4V Ta = 75°C Ta = 25°C Ta = –20°C
300
200
100
0
0
1
2
3
Input voltage VI (V)
4
5
Ta = 75°C Ta = 25°C Ta = –20°C
400
300
200
100
0
0
0.5
1.0
1.5
2.0
Forward bias voltage VF (V)
Jan.2000
This datasheet has been ed from: www.DatasheetCatalog.com Datasheets for electronic components.
M54523P/FP 7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE
DESCRIPTION M54523P and M54523FP are seven-circuit Darlington transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply.
PIN CONFIGURATION
INPUT
FEATURES ● High breakdown voltage (BV CEO ≥ 50V) ● High-current driving (IC(max) = 500mA) ● With clamping diodes ● Driving available with PMOS IC ouput ● Wide operating temperature range (Ta = –20 to +75°C) APPLICATION Drives of relays and printers, digit drives of indication elements (LEDs and lamps), and interfaces between standard MOS-bipolar logic IC
16 →O1
IN1→ 1 IN2→ 2
15 →O2
IN3→ 3
14 →O3
IN4→ 4
13 →O4
IN5→ 5
12 →O5
IN6→ 6
11 →O6
IN7→ 7
10 →O7
GND
9
8
OUTPUT
→COM COMMON
16P4(P) Package type 16P2N-A(FP)
CIRCUIT DIAGRAM COM
FUNCTION The M54523P and M54523FP each have seven circuits consisting of NPN Darlington transistors. These ICs have resistance of 2.7kΩ between input transistor bases and input pins. A spike-killer clamping diode is provided between each output pin (collector) and COM pin. The output transistor emitters are all connected to the GND pin (pin 8). The collector current is 500mA maximum. Collector-emitter supply voltage is 50V maximum.The M54523FP is enclosed in a molded small flat package, enabling space-saving design.
ABSOLUTE MAXIMUM RATINGS Symbol VCEO IC VI IF VR Pd Topr Tstg
OUTPUT INPUT
2.7k
5k 3k
The seven circuits share the COM and GND The diode, indicated with the dotted line, is parasitic, and cannot be used.
Parameter
Conditions Output, H Current per circuit output, L
Input voltage Clamping diode forward current Clamping diode reverse voltage Power dissipation Storage temperature
Unit : Ω
(Unless otherwise noted, Ta = –20 ~ +75 °C)
Collector-emitter voltage Collector current
Operating temperature
GND
Ratings –0.5 ~ +50 500 –0.5 ~ +30 500 50
Ta = 25°C, when mounted on board
1.47(P)/1.00(FP) –20 ~ +75 –55 ~ +125
Unit V mA V mA V W °C °C
Jan.2000
MITSUBISHI SEMICONDUCTOR
M54523P/FP 7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE
RECOMMENDED OPERATING CONDITIONS Symbol
(Unless otherwise noted, Ta = –20 ~ +75°C)
Limits
Parameter
VO
Output voltage Collector current (Current per 1 circuit when 7 circuits are coming on simultaneously)
IC
VIH
“H” input voltage
VIL
“L” input voltage
Duty Cycle P : no more than 8% FP : no more than 8% Duty Cycle P : no more than 30% FP : no more than 25% IC ≤ 400mA
Parameter
V (BR) CEO
Collector-emitter breakdown voltage
II VF IR h FE
max 50
0
—
400
Unit V
0
—
200
3.85 3.4 0
— — —
25 25 0.6
V V
(Unless otherwise noted, Ta = –20 ~ +75°C)
Symbol
VCE(sat)
typ —
mA
IC ≤ 200mA
ELECTRICAL CHARACTERISTICS
min 0
Limits
Test conditions ICEO = 100µA
VI = 3.85V, I C = 400mA Collector-emitter saturation voltage VI = 3.4V, IC = 200mA VI = 3.85V Input current VI = 25V Clamping diode forward volltage IF = 400mA Clamping diode reverse current VR = 50V DC amplification factor VCE = 4V, IC = 350mA, Ta = 25°C
min 50 — —
typ* — 1.2 1.0
max — 2.4 1.6
— — — — 1000
1.2 9.5 1.4 — 2500
1.8 18 2.4 100 —
Unit V V mA V µA —
* : The typical values are those measured under ambient temperature (Ta) of 25°C. There is no guarantee that these values are obtained under any conditions.
SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25 °C) Symbol ton toff
Parameter Turn-on time Turn-off time
Limits
Test conditions CL = 15pF (note 1)
min —
typ 10
max —
—
120
—
Unit ns ns
TIMING DIAGRAM
NOTE 1 TEST CIRCUIT
INPUT
Vo
INPUT
50%
50%
Measured device
RL OPEN OUTPUT
PG
OUTPUT
50Ω
50%
50%
CL ton
toff
(1)Pulse generator (PG) characteristics : PRR=1kHz, tw = 10µs, tr = 6ns, tf = 6ns, Zo = 50Ω VP = 3.85VP-P (2)Input-output conditions : RL = 25Ω, Vo = 10V (3)Electrostatic capacity CL includes floating capacitance at connections and input capacitance at probes
Jan.2000
MITSUBISHI SEMICONDUCTOR
M54523P/FP 7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE TYPICAL CHARACTERISTICS Output Saturation Voltage Collector Current Characteristics
Thermal Derating Factor Characteristics 500
M54523FP
1.0
0.5
0
Collector current Ic (mA)
500
25
50
75
3
200 •The collector current values represent the current per circuit. •Repeated frequencyy ≥ 10Hz •The value the circle represents the value of the simultaneously-operated circuit. •Ta = 25°C
20
40
60
80
4 5 6 7
500
1.0
1.5
2.0
1
300 2
200 •The collector current values represent the current per circuit. •Repeated frequency ≥ 10Hz •The value the circle represents the value of the simultaneously-operated circuit. •Ta = 75°C
100
0
20
40
60
80
Duty cycle (%)
Duty Cycle-Collector Characteristics (M54523FP)
Duty Cycle-Collector Characteristics (M54523FP)
500 1
2
200 •The collector current values represent the current per circuit. •Repeated frequency ≥ 10Hz •The value the circle represents the value of the simultaneously-operated circuit. •Ta = 25°C
0
0.5
400
0
100
300
0
0
Duty cycle (%)
400
100
Ta = 75°C Ta = 25°C Ta = –20°C
100
Duty Cycle-Collector Characteristics (M54523P)
2
500
VI = 3.85V
Duty Cycle-Collector Characteristics (M54523P)
300
0
200
Output saturation voltage VCE(sat) (V)
400
0
300
Ambient temperature Ta (°C)
1
100
400
0
100
Collector current Ic (mA)
0
Collector current Ic (mA)
Collector current Ic (mA)
M54523P
1.5
20
40
60
Duty cycle (%)
80
3 4 5 6 7
100
Collector current Ic (mA)
Power dissipation Pd (W)
2.0
3 4 5 6 7
100
400
300
1
200
2 3
4 •The collector current values represent the current per circuit. 5 •Repeated frequency ≥ 10Hz 76 •The value the circle represents the value of the simultaneously-operated circuit. •Ta = 75°C
100
0
0
20
40
60
80
100
Duty cycle (%)
Jan.2000
MITSUBISHI SEMICONDUCTOR
M54523P/FP 7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE
DC Amplification Factor Collector Current Characteristics
Input Characteristics 104
DC amplification factor hFE
Input Current II (mA)
16
12 Ta = 75°C Ta = 25°C Ta = –20°C
8
4
0
0
8
16
24
VCE = 4V Ta = 75°C Ta = 25°C Ta = –20°C
3
103 7 5 3
102 1 10
32
3
5 7 102
3
5 7 103
Input voltage VI (V)
Collector current IcC (mA)
Grounded Emitter Transfer Characteristics
Clamping Diode Characteristics
500
500
Forward bias current IF (mA)
Collector current Ic (mA)
7 5
400 VCE = 4V Ta = 75°C Ta = 25°C Ta = –20°C
300
200
100
0
0
1
2
3
Input voltage VI (V)
4
5
Ta = 75°C Ta = 25°C Ta = –20°C
400
300
200
100
0
0
0.5
1.0
1.5
2.0
Forward bias voltage VF (V)
Jan.2000
This datasheet has been ed from: www.DatasheetCatalog.com Datasheets for electronic components.
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